Carrier-induced change in refractive index of InP, GaAs and InGaAsP - Quantum Electronics, IEEE Journal of
نویسندگان
چکیده
We have theoretically estimated the change in refractive index A n produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 1016/cm3 to 10i9/cm3 and photon energies of 0.8 to 2.0 eV were considered. Predictions of A n are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as IO-* are predicted for carrier concentrations of IO'*/cm', suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.
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